The end of the last century has seen a progressive interest in materials and devices with reduced size and dimensionality. The trend predicted by Moore’s law has posed strict requirements on the electronic properties of materials that cannot always be satisfied by traditional semiconductors. Nanostructures and nanomaterials have been considered the key development for the next generation technology, due their ease of processing, unique properties and compatibility with the existent Si microelectronics.
In this context group IV semiconducting nanowires (NWs) are the strongest candidate to provide the change of paradigm needed by the new generation of electron devices, either by replacing or, more realistically, integrating the existing CMOS technology. These materials present unique structural, electronic, optical and transport properties, which are intrinsically associated with their low dimensionality and with the quantum confinement effect. As a consequence, today Si, Ge and SiGe NWs are the target of the most intriguing and exciting technological applications in the field of high performance nanoelectronics, thermoelectrics, photovoltaics, biomedicine, superconductivity and spintronics.
From another point of view, since in these materials the size is at or below the characteristic length scale of some fundamental solid-state phenomena, their investigation aids in clearer and deeper insights into basic research in material science. |